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Related Experiment Videos

High temperature gate control of quantum well spin memory.

O Z Karimov1, G H John, R T Harley

  • 1School of Physics and Astronomy, University of Southampton, Southampton, SO17 1BJ, United Kingdom.

Physical Review Letters
|December 20, 2003
PubMed
Summary

Spin relaxation in GaAs/AlGaAs quantum wells dramatically increases with electric fields, demonstrating voltage-tunable spin control. This research highlights potential for long spin-memory times and high electron mobility in semiconductor devices.

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Area of Science:

  • Solid State Physics
  • Quantum Optics
  • Materials Science

Background:

  • Spin relaxation in semiconductor quantum wells is crucial for spintronic device development.
  • Understanding electric field effects on spin dynamics is key to controlling electron spin states.

Purpose of the Study:

  • To investigate the influence of applied electric fields on spin relaxation rates in (110)-oriented GaAs/AlGaAs quantum wells.
  • To explore the relationship between electric field strength, temperature, and spin dynamics.
  • To assess the feasibility of achieving voltage-tunable spin control with high electron mobility.

Main Methods:

  • Time-resolved optical spectroscopy was employed to measure spin relaxation.
  • Experiments were conducted on (110)-oriented GaAs/AlGaAs quantum wells.

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  • Measurements were performed at temperatures of 170 K and 300 K with varying electric fields (20–80 kV cm⁻¹).

    • Main Results:

    • A tenfold increase in spin-relaxation rate was observed with electric fields from 20 to 80 kV cm⁻¹ at 170 K.
    • Similar variations in spin relaxation were noted at 300 K.
    • Spin relaxation remained largely field-independent below 20 kV cm⁻¹, attributed to quantum well interface asymmetry.
    • Calculations based on the Rashba effect accurately predicted the observed field dependence.

    Conclusions:

    • The applied electric field significantly enhances spin-relaxation rates in GaAs/AlGaAs quantum wells.
    • The results confirm the role of the Rashba effect in electric-field-induced spin manipulation.
    • Achieving a voltage-gateable spin-memory time exceeding 3 ns alongside high electron mobility is feasible.