Hopping between localized Floquet states in periodically driven quantum dots
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Updated: Aug 11, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
1The Abdus Salam International Centre for Theoretical Physics, Strada Costiera 11, 34100 Trieste, Italy. basko@ictp.trieste.it
Abstract:
The dynamic localization in energy space, suppression of the absorption of energy from an external microwave field due to quantum interference, was analyzed recently for a closed quantum dot in the absence of electron-electron interactions. Here a weak interaction is shown to lead to a finite absorption and heating, which may be viewed as hopping between localized Floquet states. The heating rate grows together with the electronic temperature, eventually destroying the localization.
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