Local manipulation of nuclear spin in a semiconductor quantum well
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Updated: Aug 29, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
M Poggio1, G M Steeves, R C Myers
1Center for Spintronics and Quantum Computing, University of California, Santa Barbara, California 93106, USA.
Abstract:
The shaping of nuclear spin polarization profiles and the induction of nuclear resonances are demonstrated within a parabolic quantum well using an externally applied gate voltage. Voltage control of the electron and hole wave functions results in nanometer-scale sheets of polarized nuclei positioned along the growth direction of the well. Applying rf voltages across the gates induces resonant spin transitions of selected isotopes. This depolarizing effect depends strongly on the separation of electrons and holes, suggesting that a highly localized mechanism accounts for the observed behavior.
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