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Related Experiment Videos

Quantitative analysis of static capacitance contrast in scanning electron microscopy.

Ren-Jian Feng1, Hai-Bo Zhang, Katsumi Ura

  • 1Department of Electronic Science and Technology, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.

Journal of Electron Microscopy
|January 1, 2004
PubMed
Summary

This study presents a 1D model for static capacitance contrast (SCC) in scanning electron microscopy. The model accurately predicts SCC based on secondary electron redistribution and effective capacitance, validating experimental findings.

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Area of Science:

  • Materials Science
  • Physics
  • Electron Microscopy

Background:

  • Static capacitance contrast (SCC) is a critical phenomenon in scanning electron microscopy (SEM) for analyzing insulating thin films on integrated circuits.
  • Understanding the underlying physics of SCC is essential for accurate material characterization and defect detection.

Purpose of the Study:

  • To develop and validate a one-dimensional model for analyzing static capacitance contrast (SCC) in scanning electron microscopy (SEM).
  • To investigate the influence of secondary electron (SE) redistribution and charging processes on SCC formation in large-scale integrated specimens.

Main Methods:

  • A one-dimensional model was developed to simulate SCC.
  • The model incorporates the redistribution of secondary electrons (SEs).

Related Experiment Videos

  • It considers the charging process and equivalent effective capacitance between the irradiation point and substrate.
  • Main Results:

    • The calculated SCC as a function of irradiation charge density showed good agreement with experimental results.
    • The model successfully reproduced experimental SCC observations.
    • Positive charging conditions were identified as crucial for SCC formation.

    Conclusions:

    • The proposed 1D model effectively analyzes SCC in SEM for thin insulating films.
    • SCC is confirmed to originate from SE redistribution and variations in effective capacitance under positive charging.
    • This work provides a valuable tool for interpreting SEM images of charged specimens.