[High-quantum-outlet red and infrared radiation for oximetry]

The paper deals with the results of designing highly effective semi-conductor red and infrared radiators based on the multitransient double heterostructures in the Ga1-xAlxAs system and structures in the GaAs:Si, which are designed for oximetry, and presents a small-sized (2.5 x 2.5 x 2.4 mm) unit with flexible terminals. The emissive power was as great as 1.3 mW at 10 mA at lambda max 660 +/- 10 nm in the red band and 1.2 mW at lambda max 925 +/- 10 nm and 2.5 mW at lambda max 870 +/- 20 nm in the infrared band. The radiators described have wide prospects for practical application to oximeters and other medical equipment.