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Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Electron-conducting quantum-dot solids with ionic charge compensation
Aarnoud L Roest1, Arjan J Houtepen, John J Kelly
1Chemistry and Physics of Condensed Matter, Debye Institute, University of Utrecht, PO Box 80000, 3508 TA Utrecht, The Netherlands.
Abstract:
Electron-conducting quantum-dot solids can be prepared on the basis of assemblies of colloidal insulating nanocrystals if electrons can be injected in the delocalized conduction orbitals. We discuss the energetics of electron injection in such an artificial solid consisting of weakly coupled quantum dots. We show that quantum confinement and electron electron repulsion determine the charging characteristics. The electron electron repulsion energy can be screened by three-dimensional charge compensation from trapped holes or positive inert ions inserted in the assembly. We present experimental results on the electron storage and long-range transport in assemblies of ZnO nanocrystals in which the electron charge is compensated by positive ions. The electron electron repulsion energy in assemblies permeated with an aqueous electrolyte solution is strongly screened. In contrast, the repulsion energy is about 100 meV in aprotic solvents; the repulsion energy strongly influences electron storage and the characteristics of long-range electron transport.
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