1Physics Department, Tokyo Institute of Technology, Japan.
You might also read
Articles linked to this work by shared authors, journal, and citation graph.
Reflection electron microscopy reveals dynamic surface processes on silicon (Si) surfaces. New observations detail electromigration, oxidation etching, and alloyed adsorbate growth, offering insights difficult to achieve with other methods.
Area of Science:
Background:
Purpose of the Study:
Main Methods:
Main Results:
Conclusions: