Related Experiment Video
Updated: Aug 10, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
Published on: December 21, 2015
Application of ultrahigh vacuum reflection electron microscopy for the study of clean silicon surfaces in
A V Latyshev1, A B Krasilnikov, A L Aseev
1Institute of Semiconductor Physics, Academy of Sciences of the USSR, Siberian Branch, Lavrentieva.
Abstract:
The construction and performance of an ultrahigh vacuum reflection electron microscope (UHV REM) on the base of a transmission electron microscope with top entry stage are described. Some results of in situ study of structural transformations on clean silicon surfaces during sublimation, surface phase transitions, and initial stages of epitaxial growth are shown.
More Related Videos
11:14Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
06:57Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020