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Published on: May 30, 2014
Optimization of an ultra low-phase noise sapphire--SiGe HBT oscillator using nonlinear CAD
Gilles Cibiel1, Myrianne Régis, Olivier Llopis
1Laboratory of Analyse and Architecture of Systems, National Center of Scientific Research (LAAS-CNRS), Toulouse, France. gcibiel@laas.fr
Abstract:
In this paper, the electrical and noise performances of a 0.8 microm silicon germanium (SiGe) transistor optimized for the design of low phase-noise circuits are described. A nonlinear model developed for the transistor and its use for the design of a low-phase noise C band sapphire resonator oscillator are also reported. The best measured phase noise (at ambient temperature) is -138 dBc/Hz at 1 kHz offset from a 4.85 GHz carrier frequency, with a loaded QL factor of 75,000.
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