Related Experiment Video
Updated: Aug 14, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Observation of many coherent oscillations for MeV protons transmitted through stacking faults
M B H Breese1, E J Teo, M A Rana
1Physics Department, National University of Singapore, 10 Lower Kent Ridge Road, Singapore 119260.
Abstract:
High spatial resolution, high-contrast transmission channeling images of stacking faults in silicon have been produced using a beam of 2 MeV protons focused to a spot size of 60 nm. Over a narrow range of beam tilts to the (011) planes, up to ten periodic intensity oscillations are observed, providing evidence of a long-range coherency of the planar channeled trajectories. This behavior is characterized using Monte Carlo computer simulations, and a phase-space model of planar channeled ion interactions with stacking faults is developed which incorporates all observed channeling and blocking phenomena.
Related Concept Videos
Forced Oscillations
Atomic Nuclei: Larmor Precession Frequency
Standing Electromagnetic Waves
Suppose a sheet of a perfect conductor is placed in the yz-plane, and a linearly polarized electromagnetic wave traveling in the...
Thomson's e/m Experiment
A particle with charge q, speed v, and mass m enters an area from the top, where the magnetic and electric fields are perpendicular both to the particle's motion and to one another. The magnetic...
Atomic Emission Spectroscopy: Interference
Fermi Level Dynamics
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...

