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Updated: Aug 26, 2026

Selective Area Modification of Silicon Surface Wettability by Pulsed UV Laser Irradiation in Liquid Environment
Published on: November 9, 2015
Hydrogen-release mechanisms in the breakdown of thin SiO2 films
1Departament d'Enginyeria Electrònica, Universitat Autónoma de Barcelona, 08193-Bellaterra, Spain.
Abstract:
The mechanism of hydrogen release from the anode Si/SiO(2) interface that triggers defect generation and finally the dielectric breakdown of the oxide in metal-oxide-semiconductor structures is investigated. Extensive experimental charge-to-breakdown statistics are used to derive the defect generation efficiency as a function of gate voltage and oxide thickness in wide ranges. The presented results provide strong support to single-electron assisted Si-H bond breakage and discard multiple electron induced incoherent vibrational heating mechanisms.
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