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Updated: Aug 25, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
Published on: July 17, 2020
Smectic-A edge dislocations in a very thin cell
1Condensed Matter Physics Department, Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia. Milan.ambrozic@ijs.si
Abstract:
We study stable "bookshelf" smectic-A structures within a very thin plane-parallel cell of thickness L in which the mismatch between surface preferred (d(s)) and intrinsic (d(0)) smectic layer thicknesses occurs. The Landau-Ginzburg approach based on a complex smectic order parameter is used. For a weak enough smectic positional anchoring strength W smectic layers adopt the modified bookshelf profile. In a thick enough cell with increasing W a lattice of edge dislocations is continuously formed at the confining surfaces and then depinned from them. The structure with dislocations is formed when the condition d(0)/(zeta(s)/d(0)/d(s)-1/) approximately 2 is fulfilled, where zeta(s) is the positional surface anchoring extrapolation length. If the cell is thin enough the dislocations formed at opposite cell plates annihilate and consequently the smectic layers adopt a locked bookshelf structure. This transition is discontinuous and takes place when d(0)/(L/d(0)/d(s)-1/) approximately 5 is realized. To observe these transitions in a cell of thickness L approximately 1microm the conditions W approximately 10(-6) J/ m(2) and /d(0)/d(s) - 1/ approximately 5 x 10(-4) have to be fulfilled. All the three qualitatively different structures coexist at the triple point.
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