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Quantitative high-resolution HAADF-STEM analysis of inversion boundaries in Sb(2)O(3)-doped zinc oxide
T Yamazaki1, N Nakanishi, A Recnik
1Department of Physics, Tokyo University of Science, Tokyo 162-8601, Japan.
Ultramicroscopy
|March 30, 2004
Abstract:
[Formula: see text] -doped ZnO crystals including inversion boundaries were investigated by high-resolution high-angle annular-dark field (HAADF) scanning transmission electron microscopy (STEM). The images were analysed with the aid of the image simulation based on Bethe method and also the retrieval processing using deconvolution. Utility of these two approaches for the HAADF-STEM analysis is discussed.

