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Quantitative aspects of the desorption of copper from the silicon (100) surface
1Department of Chemical Engineering and Industrial Chemistry, Swiss Federal Institute of Technology, ETH-Zentrum, CH-8092, Zürich, Switzerland.
Abstract:
The desorption of copper from copper contaminated Si(100) samples has been investigated by thermal desorption spectroscopy (TDS). The samples have been contaminated with aqueous CuSO(4)/EDTA solutions. The amount of copper deposited on the Si surface was in the monolayer region as determined by means of ratio-tracer experiments. The copper is adsorbed on the sample surface in two different states, which could be resolved by TDS. By means of STM and XPS measurements it was possible to assign these two desorption peaks to the desorption of copper from carbon deposits, which had already been present before the contamination process, and to the desorption of copper from the bare Si surface.
