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Related Experiment Videos

Characterization of ultra smooth interfaces in Mo/Si-multilayers.

R Dietsch1, T Holz, S Hopfe

  • 1Fraunhofer-Institut für Werkstoffphysik und Schichttechnologie Dresden, Helmholtzstrasse 20, D-01069, Dresden, Germany.

Analytical and Bioanalytical Chemistry
|October 1, 1995
PubMed
Summary

Pulsed Laser Deposition (PLD) of Mo/Si multilayers forms MoSi(x) interlayers due to atom diffusion. UV-photon ablation yields highly smooth interfaces, crucial for advanced multilayer applications.

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Area of Science:

  • Materials Science
  • Thin Film Technology
  • Surface Science

Background:

  • Multilayer structures are critical for various optical and electronic applications.
  • Understanding interface formation is key to controlling material properties.
  • Pulsed Laser Deposition (PLD) is a versatile technique for thin film deposition.

Purpose of the Study:

  • To investigate the interface structure of Molybdenum/Silicon (Mo/Si) multilayers prepared by PLD.
  • To analyze the role of reaction/diffusion processes during film growth.
  • To optimize deposition parameters for achieving high-quality interfaces.

Main Methods:

  • In-situ ellipsometry during film growth.
  • Secondary Neutral Mass Spectrometry (SNMS) and Rutherford Backscattering Spectrometry (RBS) for compositional analysis.

Related Experiment Videos

  • High-Resolution Electron Microscopy (HREM) for structural and morphological characterization.
  • Image analysis for interface roughness quantification.

    • Main Results:

    • MoSi(x) interlayers form at both Mo-on-Si and Si-on-Mo interfaces due to reaction/diffusion.
    • SNMS and RBS confirm similar concentration profiles for these interlayers.
    • HREM reveals improved layer stack quality and abrupt interfaces with increasing photon energy during PLD.
    • UV-photon ablation resulted in exceptionally smooth interfaces (sigma(R) ≈ 0.1 nm) with distinct layer separation.
    • No roughness replication or amplification was observed across interfaces.

    Conclusions:

    • PLD is effective in fabricating Mo/Si multilayers with controlled interface properties.
    • Optimizing deposition parameters, particularly using UV-photon ablation, leads to superior interface quality.
    • The low interface roughness achieved is advantageous for applications requiring precise multilayer structures.