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Updated: Aug 12, 2026

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
Published on: June 13, 2015
Ambient pressure synthesis of corundum-type IN2O3
Mauro Epifani1, Pietro Siciliano, Alexander Gurlo
1Istituto per la Microelettronica e i Microsistemi, IMM-CNR, Sezione di Lecce, Via Arnesano, 73100 Lecce, Italy.
Abstract:
This communication reports the formation of the high-pressure modification of indium (III) oxide (so-called corundum-type or hexagonal In2O3) under ambient pressure. Corundum-type In2O3 was obtained by precipitation from the solution of indium nitrate in methanol by adding concentrated ammonia solution and subsequent calcination of the obtained precipitate at 250-500 degrees C. The role of the impurities and the additives in the stabilization of corundum-type In2O3 is discussed.
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