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Updated: Aug 24, 2026

Piezoreflectance Spectroscopy of Optical Transitions in van der Waals Layered Crystals
Published on: May 22, 2026
Mie resonances, infrared emission, and the band gap of InN
T V Shubina1, S V Ivanov, V N Jmerik
1Ioffe Physico-Technical Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia. shubina@beam.ioffe.ru
Abstract:
Mie resonances due to scattering or absorption of light in InN-containing clusters of metallic In may have been erroneously interpreted as the infrared band gap absorption in tens of papers. Here we show by direct thermally detected optical absorption measurements that the true band gap of InN is markedly wider than the currently accepted 0.7 eV. Microcathodoluminescence studies complemented by the imaging of metallic In have shown that bright infrared emission at 0.7-0.8 eV arises in a close vicinity of In inclusions and is likely associated with surface states at the metal/InN interfaces.
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