Related Experiment Video
Updated: Aug 14, 2026

Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
High-frequency spin-valve effect in a ferromagnet-semiconductor-ferromagnet structure based on precession of the
1Hewlett-Packard Laboratories, 1501 Page Mill Road, 1L, Palo Alto, California 94304, USA.
Abstract:
A new mechanism of magnetoresistance, based on tunneling emission of spin-polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions.
More Related Videos
09:06Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
07:42Optimizing Magnetic Force Microscopy Resolution and Sensitivity to Visualize Nanoscale Magnetic Domains
Published on: July 20, 2022
Related Concept Videos
Atomic Nuclei: Nuclear Spin State Overview
Atomic Nuclei: Nuclear Spin State Population Distribution
Atomic Nuclei: Magnetic Resonance
Atomic Nuclei: Nuclear Relaxation Processes
Spin–Spin Coupling Constant: Overview
Qualitatively, any spin plus-half nucleus polarizes the spins of its electrons to the minus-half state. Consequently, the paired electron in the hydrogen–carbon bond must have a...
Ferromagnetism