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Updated: Aug 24, 2026
Measurement of Coherence Decay in GaMnAs Using Femtosecond Four-wave Mixing
Published on: December 3, 2013
Demonstration of a 1/4-cycle phase shift in the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs
R G Mani1, J H Smet, K von Klitzing
1Gordon McKay Laboratory of Applied Science, Harvard University, 9 Oxford Street, Cambridge, Massachusetts 02138, USA.
Abstract:
We examine the phase and the period of the radiation-induced oscillatory magnetoresistance in GaAs/AlGaAs devices utilizing in situ magnetic field calibration by electron spin resonance of diphenyl-picryl-hydrazal. The results confirm a f-independent 1/4-cycle phase shift with respect to the hf=j variant Planck's over 2pi omega(c) condition for j>/=1, and they also suggest a small ( approximately 2%) reduction in the effective mass ratio, m(*)/m, with respect to the standard value for GaAs/AlGaAs devices.
