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A glass/silicon composite intracortical electrode array.

K E Jones1, P K Campbell, R A Normann

  • 1Department of Bioengineering, University of Utah, Salt Lake City 84112.

Annals of Biomedical Engineering
|January 1, 1992
PubMed
Summary
This summary is machine-generated.

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A novel manufacturing method creates advanced silicon penetrating electrode arrays for brain implantation. These arrays feature superior electrical isolation and properties for enhanced neural recording applications.

Area of Science:

  • Biomedical Engineering
  • Materials Science
  • Neuroscience

Background:

  • Electrode arrays are crucial for interfacing with the cerebral cortex.
  • Previous designs faced limitations in electrical isolation and performance.
  • Advancements in manufacturing are needed for improved neural recording.

Purpose of the Study:

  • To introduce a new manufacturing technique for silicon-based penetrating electrode arrays.
  • To detail the use of a glass dielectric for enhanced electrical isolation.
  • To characterize the electrical and mechanical properties of the novel arrays.

Main Methods:

  • Developed a manufacturing process for glass/silicon composite electrode arrays.
  • Fabricated arrays with 100 silicon needle-type electrodes (1,500 microns long).

Related Experiment Videos

  • Employed a glass dielectric for interelectrode isolation, replacing p-n-p junctions.

    • Main Results:

    • Achieved superior interelectrode impedances (≥ 10^13 Ω).
    • Measured low interelectrode capacitances (approx. 50 fF).
    • Demonstrated enhanced electrical properties compared to previous methods.

    Conclusions:

    • The new manufacturing technique yields high-performance penetrating electrode arrays.
    • Glass dielectric isolation offers significant advantages for neural interface devices.
    • These arrays show promise for advanced applications in cerebral cortex research and implantation.