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Updated: Jul 15, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
h/e magnetic flux modulation of the energy gap in nanotube quantum dots
Ulas C Coskun1, Tzu-Chieh Wei, Smitha Vishveshwara
1Department of Physics, University of Illinois at Urbana-Champaign, 1110 West Green Street, Urbana, IL 61801-3080, USA.
Abstract:
We report experiments on quantum dot single-electron-tunneling (SET) transistors made from short multiwall nanotubes and threaded by magnetic flux. Such systems allow us to probe the electronic energy spectrum of the nanotube and its dependence on the magnetic field. Evidence is provided for the interconversion between gapped (semiconducting) and ungapped (metallic) states. Our tubes exhibit h/e-period magnetic flux dependence, in agreement with simple tight-binding calculations.
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