Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Experiment Videos

FIB-induced damage in silicon.

S Rubanov1, P R Munroe

  • 1School of Physics, University of Melbourne, Victoria 3010, Australia.

Journal of Microscopy
|May 26, 2004
PubMed
Summary

Focused ion beam milling of silicon creates amorphous layers and gallium implantation. Damage depth depends on beam energy, not current, with silicon recoils also contributing to damage.

Related Concept Videos

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Influence of recrystallization on stability of tungsten scanning tunneling microscope tips.

The Review of scientific instruments·2024
Same author

Creation of pure non-crystalline diamond nanostructures <i>via</i> room-temperature ion irradiation and subsequent thermal annealing.

Nanoscale advances·2022
Same author

Synthesis and Compositional Analysis of Permalloy Powder Prepared by Arc-Discharge.

Journal of nanoscience and nanotechnology·2015
Same author

Direct measurement and modelling of internal strains in ion-implanted diamond.

Journal of physics. Condensed matter : an Institute of Physics journal·2013
Same author

Controlled deterministic implantation by nanostencil lithography at the limit of ion-aperture straggling.

Nanotechnology·2013
Same author

Characterization of nanoscale features in tapered fractal and photonic crystal fibers.

Optics express·2011

Area of Science:

  • Materials Science
  • Surface Science
  • Nanotechnology

Background:

  • Focused ion beam (FIB) milling is a common technique for preparing electron microscopy specimens.
  • Understanding FIB-induced damage is crucial for accurate material characterization.

Purpose of the Study:

  • To assess the damage created in silicon specimens prepared using focused ion beam (FIB) milling.
  • To investigate the effects of different beam conditions on FIB-induced damage.

Main Methods:

  • Cross-section analysis of FIB-milled silicon trenches.
  • Analysis of side-wall and bottom-wall damage layers.
  • Detection of implanted gallium.
  • Monte Carlo modeling of damage formation.

Main Results:

  • Side-wall damage: amorphous layer with gallium implantation.
  • Bottom-wall damage: complex amorphous and crystalline layers with higher gallium content.
  • Redeposition of gallium-enriched material observed in complex milling geometries.
  • Damage layer thickness is strongly dependent on beam energy, independent of beam current.
  • Recoil silicon atoms significantly contribute to the observed damage.

Conclusions:

  • FIB milling of silicon results in complex damage layers with gallium implantation.
  • Beam energy is a critical parameter controlling damage depth.
  • Silicon recoil is a significant factor in FIB-induced damage mechanisms.

Related Experiment Videos