Local near-field enhancement of random Sb-SiN films

Local near-field enhancement of random Sb-SiN films has been studied. Specimens consisting of a random Sb-SiN film and an optical recording layer were prepared and exposed to a focused laser beam. Laser-induced ablation occurred on the recording layer adjacent to random Sb-SiN film much faster and at much lower power than on a single recording layer. These results indicate that an optical field can be enhanced by random Sb-SiN films. The enhanced field was subsequently investigated by scanning near-field optical microscopy, and the pictures revealed that the enhanced field was localized.