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Updated: Aug 23, 2026

Construction and Characterization of External Cavity Diode Lasers for Atomic Physics
Published on: April 24, 2014
External-cavity, actively mode-locked grating-coupled surface-emitting laser and amplification characteristics of a
Kyungbum Kim1, Shinwook Lee, Oleg Smolski
1Ultrafast Photonics Group, School of Optics, Center for Research and Education in Optics and Lasers, University of Central Florida, 4000 Central Florida Boulevard, Orlando, Florida 32816-2700, USA. kkim@creol.ucf.edu
Abstract:
An external-cavity, actively mode-locked grating-coupled surface-emitting semiconductor laser (GCSEL) is demonstrated for the first time to the authors' knowledge. The mode-locked oscillator generates a train of optical pulses at a 297-MHz pulse-repetition frequency. The optical pulse from the oscillator has a width of 22.6 ps and a spectral bandwidth of 0.07 nm at 975.9 nm, giving a time-bandwidth product of 0.50. In addition, amplification characteristics of a grating-coupled semiconductor optical amplifier are studied with a continuous-wave external-cavity GCSEL.
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