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Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Identification of the first nucleated phase in submonolayer Ti deposited on Si(111)-7 x 7 by atomic resolution
1Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu 300, Taiwan, People's Republic of China.
Ultramicroscopy
|July 3, 2004
Abstract:
Ti5Si4 has been identified to be the first nucleated phase in submonolayer Ti deposited on the Si(111)-7 x 7 surface by ultrahigh vacuum scanning tunneling microscopy in conjunction with atomic-resolution transmission electron microscopy. The direct observation of the formation of clusters surrounded by the heavily damaged silicon lattice strongly suggested that Si is the dominant diffusing species in forming the silicide.

