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Updated: Aug 23, 2026

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Multimode transport in Schottky-barrier carbon-nanotube field-effect transistors
J Appenzeller1, J Knoch, M Radosavljević
1IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA.
Abstract:
We present a detailed study on the impact of multimode transport in carbon nanotube field-effect transistors. Under certain field conditions electrical characteristics of tube devices are a result of the contributions of more than one one-dimensional subband. Through potassium doping of the nanotube the impact of the different bands is made visible. We discuss the importance of scattering for a stepwise change of current as a function of gate voltage and explain the implications of our observations for the performance of nanotube transistors.
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