New methods for semiconductor charge-diffusion-length measurements using synchrotron radiation.

Area of Science:

• Physics
• Materials Science
• Detector Technology

Background:

• Multichannel semiconductor detectors are crucial for position-sensitive observations in fields like synchrotron radiation research.
• Accurate characterization of their X-ray energy response is essential for reliable data acquisition.
• Existing theories require extension to fully describe complex detector behaviors.

Purpose of the Study:

• To extend and verify a new theory on the X-ray energy response of semiconductor detectors.
• To characterize the X-ray response of a silicon-wafer-based multichannel semiconductor detector.
• To experimentally demonstrate three-dimensional charge-diffusion effects on detector signals.

Main Methods:

• Extension of a theoretical framework for X-ray energy response.
• Fabrication of multichannel semiconductor detectors on a silicon wafer.
• Experimental verification using synchrotron radiation at the Photon Factory.
• Analysis of signals from two types of multichannel detectors.

Main Results:

• Experimental demonstration of three-dimensional charge-diffusion effects impacting adjacent detector channels.
• Verification of the essential physics principles of the proposed X-ray response theory.
• Characterization of the X-ray response for specific multichannel detector designs.

Conclusions:

• The extended theory accurately describes the X-ray response of multichannel semiconductor detectors.
• Observed charge-diffusion effects provide insights into detector physics.
• The findings offer practical methods for measuring diffusion lengths in industrial applications.