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Related Experiment Videos

XAFS spectra from reflectivity measurements.

K Tani1, T Nanjyo, S Masui

  • 1Ricoh R & D Center, Tsuzuki-ku, Yokohama 224, Japan.

Journal of Synchrotron Radiation
|July 21, 2004
PubMed
Summary
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Titanium silicide (TiSi2) films were studied using reflectivity measurements near the Ti K-edge. This novel

Area of Science:

  • Materials Science
  • Solid State Physics
  • Surface Science

Background:

  • Titanium silicide (TiSi2) is a crucial material in microelectronics.
  • X-ray absorption fine structure (XAFS) spectroscopy provides valuable electronic and structural information.
  • Measuring XAFS using reflectivity offers an alternative to transmission methods.

Purpose of the Study:

  • To develop and apply a reflectivity-based XAFS (ReflXAFS) technique for TiSi2 films.
  • To extract titanium K-edge XAFS signals from reflectivity data.
  • To investigate the electronic structure of TiSi2 films.

Main Methods:

  • Preparation of TiSi2 films (approx. 30 nm) on Si(001) substrates via Ti thin film silicidation.
  • Measurement of film reflectivity as a function of photon energy at the Ti K-edge.

Related Experiment Videos

  • Utilizing Fresnel reflectivity equations and Kramers-Kronig relations to extract absorption (beta) from reflectivity (R) and dispersion (delta).

    • Main Results:

    • Successfully extracted titanium K-edge XAFS signals from reflectivity data of TiSi2 films.
    • Demonstrated the feasibility of the 'ReflXAFS' method for thin film analysis.
    • Obtained information on the electronic structure of TiSi2.

    Conclusions:

    • The 'ReflXAFS' technique is effective for probing the electronic structure of thin TiSi2 films.
    • Reflectivity measurements near the critical angle provide a viable route to XAFS data.
    • This method offers an alternative for characterizing thin film materials where transmission is not feasible.