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Application of the exact exchange potential method for half metallic intermediate band alloy semiconductor

J J Fernández1, C Tablero, P Wahnón

  • 1Instituto de Energía SolarDepartamento de Tecnologías Aplicadas a la Telecomunicación, ETSI Telecomunicación, Universidad Politécnica de Madrid, Ciudad Universitaria s/n 28040 Madrid, Spain. julio@etsit.upm.es

The Journal of Chemical Physics
|July 23, 2004
PubMed

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