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Optical control over photoconductivity in polyferrocenylsilane films
M Tzolov1, P W Cyr, E H Sargent
1Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada. marian_tzolov@brown.edu
The Journal of Chemical Physics
|July 23, 2004
Summary
Photooxidation of polyferrocenylsilanes creates persistent photoconductivity. Long-lived excitons at oxidized sites enable charge carrier generation for electronic devices.
Area of Science:
- Materials Science
- Photophysics
- Polymer Chemistry
Background:
- Polyferrocenylsilanes exhibit promising optoelectronic properties.
- Understanding photoconductivity mechanisms is crucial for device applications.
Purpose of the Study:
- To elucidate the origin of photoconductivity in polyferrocenylsilanes.
- To investigate the charge photogeneration process after photooxidation.
Main Methods:
- Photooxidation using ultraviolet irradiation in chloroform.
- Spectroscopic analysis including photocurrent and photomodulation spectroscopy.
- Long-term monitoring of optoelectronic property changes.
Main Results:
- Persistent photoconductivity observed for months.
- Photocurrent spectrum correlates with absorption, indicating non-mixed material.
- Long-lived photoexcited states (millisecond lifetime) identified as trapped excitons.
- Polymer deformation around oxidized sites influences charge carrier generation.
Conclusions:
- Photooxidation of polyferrocenylsilanes leads to stable photoconductivity.
- Trapped excitons at deformed oxidized sites are key to charge photogeneration.
- These findings are vital for developing polyferrocenylsilane-based electronic and photonic devices.
