Crystal Field Theory - Octahedral Complexes
Imperfections in Crystal Structure: Point, Line and Plane Defects
Imperfections in Crystal Structure: Stoichiometric Point Defects
Quarrying of Stone
Transition Zone
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Updated: Jun 18, 2026

Monolayer Contact Doping of Silicon Surfaces and Nanowires Using Organophosphorus Compounds
Published on: December 3, 2013
P Strobel1, M Riedel, J Ristein
1Institute for Technical Physics, University of Erlangen, 91054 Erlangen, Germany.
Researchers developed a new doping method for diamond semiconductors using C60 molecules, avoiding foreign atom introduction. This process induces subsurface hole accumulation and enhances conductivity, paving the way for advanced diamond electronic devices.
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