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Related Experiment Videos

Ordering in thermally oxidized silicon.

A Munkholm1, S Brennan

  • 1Stanford Synchrotron Radiation Laboratory, Stanford Linear Accelerator Center, Menlo Park, California 94025, USA.

Physical Review Letters
|August 25, 2004
PubMed
Summary

Silicon atoms retain some order within silicon dioxide films after thermal oxidation. A new model explains this residual ordering, crucial for understanding silicon wafer properties.

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Area of Science:

  • Materials Science
  • Solid State Physics
  • Surface Science

Background:

  • Thermal oxidation of silicon is a key process in semiconductor manufacturing.
  • Understanding the atomic structure of the resulting silicon dioxide (SiO2) layer is critical for device performance.

Purpose of the Study:

  • To investigate the residual ordering of silicon atoms in thermally oxidized silicon wafers.
  • To develop a predictive model for this residual atomic order.

Main Methods:

  • Utilized X-ray scattering techniques.
  • Analyzed SiO2 films on various Si surfaces (Si(001), Si(011), Si(111)) with thicknesses from 60 to 1000 Å.
  • Examined both on-axis and miscut surfaces.

Main Results:

  • Observed and quantified residual atomic ordering in SiO2 films across all tested surfaces and thicknesses.
  • Developed a model predicting scattering positions based on lattice expansion during oxidation.
  • Found that the degree of expansion and disorder depends on the oxidation process.

Conclusions:

  • The model accurately predicts residual silicon atom ordering in thermally oxidized SiO2.
  • Silicon lattice expansion during oxidation contributes to this ordering.
  • Oxidation process type influences the extent of residual order and disorder.

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