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Updated: Aug 22, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Exciton-population inversion and terahertz gain in semiconductors excited to resonance
1Fachbereich Physik and Material Sciences Center, Philipps Universität, Renthof 5, 35032 Marburg, Germany.
Abstract:
The buildup of exciton populations in resonantly laser excited semiconductors is studied microscopically. For excitation around the 2s-exciton resonance, it is shown that polarization with a strict s-type radial symmetry can be efficiently converted into an incoherent p-type population. As a consequence, inversion between the 2p and 1s exciton states can be obtained leading to the appearance of significant terahertz gain.
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