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Nonlinear optical spectroscopy of suboxides at oxidized Si(111) interfaces
S Bergfeld1, B Braunschweig, W Daum
1Institut für Schichten und Grenzflächen (ISG 3), Forschungszentrum Jülich, D-52428 Jülich, Germany.
Physical Review Letters
|September 28, 2004
Abstract:
Native oxidation of the Si(111)(1 x 1)H surface causes the appearance and disappearance of second-harmonic generation (SHG) resonances related to specific bonding configurations of Si atoms at the interface. Resonances at 3.52 eV two-photon energy observed in p-polarized SHG spectra are indicative of a Si suboxide configuration present in a partially oxidized Si surface bilayer. Similar resonances are observed in spectra of thermally oxidized Si(111) and point to Si2+ suboxide states at the buried interface.