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Updated: Aug 21, 2026

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
Published on: May 10, 2021
Enhanced planar channeling of MeV protons through thin crystals
M B H Breese1, M A Rana, T Osipowicz
1Physics Department, National University of Singapore, 10 Lower Kent Ridge Road, Singapore 119260.
Abstract:
At certain tilt alignments between a MeV proton beam and a planar channeling direction, a single interface lattice rotation within a crystal can result in a lower rate of dechanneling than at planar alignment in a perfect crystal. Such planar channeling enhancement arises when the beam passes through a layer thickness which is a half-multiple of the oscillation wavelength and then encounters a small interface rotation which is matched to the beam tilt angle. The beam is projected into the center of the phase space ellipse below the interface, resulting in certain trajectories undergoing a reduction in their transverse energy, in a manner analogous to stochastic cooling or atom laser cooling.

