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[Semiconductor low level laser irradiation for exposure of hydroxyapatite orbital implants]
Hong-fei Liao1, Qiang-juan Chen, Jing-lin Yi
1Department of Ophthalmology, The First Affiliated Hospital, Jiangxi Medical College, Nanchang 330006, China.
Objective:
To evaluate the efficacy of semiconductor low level laser irradiation for the treatment of postoperative exposure of hydroxyapatite orbital implants.
Methods:
22 cases with postoperative exposure of hydroxyapatite orbital implants were divided into three groups according to the size of implants exposure. The exposure wound in the 3 groups was irradated with semiconductor low level laser 5 min per day for 5-15 days. The follow-up period ranged from 2 to 24 months.
Results:
In the group with less then 3 mm of exposure, the wound healed in 1 week after 5-10 days irradiation; in the group with implant exposure of 4-7 mm, the would healed in 1-2 weeks after 10-15 days irradiation; in the group with implant exposure of 8-10 mm, the would healed in 2-3 weeks after 10-15 days irradiation. Compared with the treatments of drugs and/or surgical repair, which was used for another 20 cases of exposure of hydroxyapatite orbital implants, semiconductor low level laser increased healing rate obviously in the groups with implant exposure of 4-7 mm and 8-10 mm (P = 0.019, 0.018).
Conclusion:
Semiconductor low level laser has better effects than drugs and/or surgical repair for exposure of hydroxyapatite orbital implants.
