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Updated: Aug 21, 2026

Scanning-probe Single-electron Capacitance Spectroscopy
Published on: July 30, 2013
Surface charge compensation for a highly charged ion emission microscope
J W McDonald1, A V Hamza, M W Newman
1Lawrence Livermore National Laboratory, L 472, Livermore, California 94550, USA. mcdonald6@llnl.gov
Abstract:
A surface charge compensation electron flood gun has been added to the Lawrence Livermore National Laboratory (LLNL) highly charged ion (HCI) emission microscope. HCI surface interaction results in a significant charge residue being left on the surface of insulators and semiconductors. This residual charge causes undesirable aberrations in the microscope images and a reduction of the time-of-flight (T-O-F) mass resolution when studying the surfaces of insulators and semiconductors. The benefits and problems associated with HCI microscopy and recent results of the electron flood gun-enhanced HCI microscope are discussed.
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