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Charging in scanning electron microscopy "from inside and outside".

Jacques Cazaux1

  • 1LASSI/UTAP, UFR Sciences, Reims, France. jacques.cazaux@univ-reims.fr

Scanning
|October 12, 2004
PubMed
Summary

This study re-evaluates insulator charging mechanisms using scanning electron microscopy (SEM). It suggests critical energies for minimizing charging depend on electron escape depths, not just secondary electron emission (SEE) yield.

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Ultramicroscopy·2008

Area of Science:

  • Materials Science
  • Surface Science
  • Electron Microscopy

Background:

  • Insulator charging under electron beams is a complex phenomenon.
  • Current models often simplify secondary electron emission (SEE) yield dynamics.
  • Scanning electron microscopy (SEM) is crucial for investigating these charging effects.

Purpose of the Study:

  • To analyze complex charging and discharging mechanisms in insulators.
  • To challenge conventional understanding of critical energies for minimizing charging.
  • To investigate the influence of contamination layers and time constants on charging.

Main Methods:

  • Analysis of secondary electron emission (SEE) yield data.
  • Application of electrostatic principles.
  • Comparison of short pulse and permanent irradiation experimental results.
  • Numerical simulations to quantify effects.

Main Results:

  • Proposed a new definition for critical energy (EC2) related to electron escape depths for defocused irradiation.
  • Demonstrated that contamination layers can induce negative charging at any beam energy.
  • Highlighted the role of dielectric time constants in dose rate-dependent charging.
  • Predicted new SEE effects during initial irradiation with focused probes.

Conclusions:

  • The study provides a revised understanding of insulator charging mechanisms under electron beams.
  • Practical implications for SEM imaging and sample preparation are discussed.
  • New insights into contrast reversal phenomena are offered.

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