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Related Experiment Videos

Spin-dependent transport in molecular tunnel junctions.

J R Petta1, S K Slater, D C Ralph

  • 1Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA.

Physical Review Letters
|November 5, 2004
PubMed
Summary

We fabricated magnetic tunnel junctions using molecular barriers, showing spin-polarized electron transport. Localized states within the molecular barrier can reduce the spin signal quality.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Molecular barriers offer novel functionalities in electronic devices.
  • Spin-polarized transport is crucial for spintronics applications.

Purpose of the Study:

  • To investigate spin-polarized electron transport through self-assembled-monolayer molecular barriers.
  • To analyze the impact of molecular barrier properties on spin transport.

Main Methods:

  • Fabrication of Ni-octanethiol-Ni magnetic tunnel junctions in a nanopore geometry.
  • Measurement of device resistance as a function of the angle between magnetic moments.
  • Analysis of voltage and temperature dependence of transport properties.

Main Results:

  • Demonstrated significant resistance changes with varying magnetic moment angles, confirming spin-polarized transport.
  • Showcased that low-energy electrons can maintain spin polarization across the molecular barrier.
  • Identified localized states in molecular barriers as a factor degrading spin-polarized transport signals.

Conclusions:

  • Self-assembled-monolayer molecular barriers enable spin-polarized electron transport.
  • Device performance is influenced by the quality and electronic states within the molecular barrier.
  • Further research into mitigating localized states is needed for optimized molecular spintronic devices.

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