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Updated: Aug 21, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Comment on "Transient evolution of surface roughness on patterned GaAs(001) during homoepitaxial growth"

A Ballestad, T Tiedje, J H Schmid

    Physical Review Letters
    |November 5, 2004
    PubMed
    Abstract

    No abstract available in PubMed .

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