Related Experiment Video
Updated: Jul 19, 2026

11:54
Growth and Electrostatic/chemical Properties of Metal/LaAlO3/SrTiO3 Heterostructures
Published on: February 8, 2018
Enhancement of ferroelectricity in strained BaTiO3 thin films
K J Choi1, M Biegalski, Y L Li
1Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, WI 53706, USA.
Abstract:
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500 degrees C higher and a remanent polarization at least 250% higher than bulk BaTiO3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.

