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Composition and stress analysis in Si structures using micro-raman spectroscopy.

J McCarthy1, S Bhattacharya, T S Perova

  • 1Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin, Ireland. jmccart2@tcd.ie

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|November 13, 2004
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Strained silicon (Si) technology enhances semiconductor performance by using biaxially strained Si thin films. Raman spectroscopy effectively characterizes the strain in Si and its impact on underlying silicon-germanium (SiGe) layers.

Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Nanotechnology

Background:

  • Complementary metal-oxide-semiconductor (CMOS) devices are foundational to modern electronics.
  • Improving CMOS performance is crucial for advancing computing power and functionality.
  • Strained silicon (Si) technology offers a pathway to enhance device characteristics.

Purpose of the Study:

  • To investigate the growth processes of strained silicon.
  • To quantify the level of strain/stress in biaxially strained Si thin films.
  • To analyze the influence of strained Si on the underlying graded silicon-germanium (SiGe) layer.

Main Methods:

  • Utilizing Raman spectroscopy for material characterization.
  • Analyzing the spectral shifts to determine strain and stress levels in silicon.

Related Experiment Videos

  • Characterizing the interface and properties of the SiGe buffer layer.

    • Main Results:

    • Demonstrated the capability of Raman spectroscopy to monitor strained Si growth.
    • Quantified the biaxial strain induced in the Si thin film.
    • Observed the effects of Si strain on the properties of the underlying SiGe layer.

    Conclusions:

    • Strained silicon technology is a viable method for improving CMOS performance.
    • Raman spectroscopy is a powerful tool for in-situ characterization of strained Si growth.
    • Understanding strain effects is critical for optimizing SiGe/Si heterostructures in advanced semiconductor devices.