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Updated: Aug 21, 2026

Implementation of a Nonlinear Microscope Based on Stimulated Raman Scattering
Published on: July 6, 2019
Composition and stress analysis in Si structures using micro-raman spectroscopy
J McCarthy1, S Bhattacharya, T S Perova
1Department of Electronic and Electrical Engineering, University of Dublin, Trinity College, Dublin, Ireland. jmccart2@tcd.ie
Abstract:
Strained silicon (Si) technology enables improvements in complementary metal oxide semiconductor (CMOS) performance and functionality via replacement of the bulk, cubic-crystal Si substrate with an Si substrate that contains a tetragonally distorted, biaxially strained Si thin film at the surface. Here we use Raman spectroscopy to allow us to characterise growth processes of strained si, and to characterise the resulting level of strain/stress in the si and the effect it has on the underlying layer of graded SiGe.
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