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Updated: Jul 21, 2026

Atomically Defined Templates for Epitaxial Growth of Complex Oxide Thin Films
Published on: December 4, 2014
Origin of apparent critical thickness for island formation in heteroepitaxy
1IBM Research Division, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598, USA.
Abstract:
We find that a continuum model of heteroepitaxy exhibits a sharp crossover with increasing coverage, from planar growth to island formation. The "critical thickness" at which this Stranski-Krastanov transition occurs depends sensitively on misfit strain, with a dependence strikingly similar to that seen experimentally. The initial planar growth occurs because of intermixing of deposited material with the substrate. While the transition is strictly kinetic in nature, it depends only weakly on growth rate. The role of surface segregation is also discussed.

