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All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Dependence of the superconducting transition temperature on the doping level in single-crystalline diamond films
E Bustarret1, J Kacmarcik, C Marcenat
1Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS, B.P.166, 38042 Grenoble Cedex 9, France.
Abstract:
Homoepitaxial diamond layers doped with boron in the 10(20)-10(21) cm(-3) range are shown to be type II superconductors with sharp transitions (approximately 0.2 K) at temperatures increasing from 0 to 2.1 K with boron contents. The critical concentration for the onset of superconductivity in those 001-oriented single-crystalline films is about 5-7 10(20) cm(-3). The H-T phase diagram has been obtained from transport and ac-susceptibility measurements down to 300 mK.
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