Related Experiment Video
Updated: Aug 19, 2026

Integrating a Triplet-triplet Annihilation Up-conversion System to Enhance Dye-sensitized Solar Cell Response to Sub-bandgap Light
Published on: September 12, 2014
New model for the internal quantum efficiency of photodiodes based on photocurrent analysis
Alejandro Ferrero1, Joaquin Campos, Alicia Pons
1Instituto de Fisica Aplicada, Consejo Superior de Investigaciones Cientificas, c/Serrano 144, Madrid 28006, Spain.
Abstract:
A new expression for the internal quantum efficiency of a photodiode is presented. It is obtained from the analysis of the photocurrent generated within the diode, considering the power and the cross-sectional diameter of the incident beam. The model explains variations of the internal quantum efficiency with irradiance that are not explained by other existing models, although this experimental fact was already known. The well-known phenomenon of supraresponsivity is also explained with this model. Finally, we show the dependence of the internal quantum efficiency on the variables involved in the model.
Related Concept Videos
Small-signal Diode Model
Modeling of Diode Forward Characteristics
P-N junction
Diode: Reverse bias
Diode: Forward bias
The behavior of a diode in forward bias...
