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Updated: Aug 19, 2026

Fabrication of Surface Acoustic Wave Devices on Lithium Niobate
Published on: June 18, 2020
Simulation of characteristics of a SiO2/c-axis-oriented LiNbO3/diamond surface acoustic wave
Shin-ichi Shikata1, Akihiro Hachigo, Hideaki Nakahata
1Device Technologies Center, Sumitomo Electric Industries Ltd., 1-1-3 Shimaya, Konohana-ku, Osaka, 554-0024, Japan. shikata-shinichi@sei.co.jp
Abstract:
High-frequency surface acoustic wave (SAW) devices based on diamond that have been realized to date utilize c-axis-oriented ZnO as the piezoelectric thin film. This material, with SiO2 overlay, shows excellent characteristics of a high phase velocity of over 10,000 m/s and a zero temperature coefficient, and it has been successfully applied to high-frequency SAW filters and resonators. To expand on materials used on diamond, the theoretical calculation has been carried out for LiNbO3/diamond, and a high electromechanical coupling coefficient up to 9.0% is expected. In this work, the characteristics of SiO2/LiNbO3/diamond were studied by computer simulation, emphasizing a zero temperature coefficient with a high coupling coefficient. Calculations are carried out for the phase velocity, the electromechanical coupling coefficient, and the temperature coefficient of the Rayleigh wave and its higher mode Sezawa wave. As a result, SiO2/IDT/LiNbO3/diamond is found to offer a zero temperature coefficient with a very high coupling coefficient up to 10.1% in conjunction with a high phase velocity of 12,100 m/s.
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