Related Experiment Video

Updated: Aug 19, 2026

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries
09:51

Atom Probe Tomography Studies on the Cu(In,Ga)Se2 Grain Boundaries

Published on: April 22, 2013

Ga-rich limit of surface reconstructions on GaAs(001): atomic structure of the (4 x 6) phase

Akihiro Ohtake1, Pavel Kocán, Kaori Seino

  • 1National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan. OHTAKE.Akihiro@nims.go.jp

Physical Review Letters
|February 9, 2005
PubMed

More Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry07:10

3D Depth Profile Reconstruction of Segregated Impurities Using Secondary Ion Mass Spectrometry

Published on: April 29, 2020

Related Concept Videos

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...