Second-harmonic generation in graded metallic films

The German physicist Heinrich Hertz (1857–1894) was the first to generate and detect certain types of electromagnetic waves in the laboratory. Starting in 1887, he performed a series of experiments that confirmed the existence of electromagnetic waves and verified that they travel at the speed of light. Hertz used an alternating-current RLC (resistor-inductor-capacitor) circuit that resonated at a known frequency and connected it to a loop of wire. High voltages induced across the gap in the...

Van de Graaff generators (or Van de Graaffs) are devices used to demonstrate high voltage due to static electricity that can also be used for research. Robert Van de Graaff first built one in 1931 (based on original suggestions by Lord Kelvin) for use in nuclear physics research.
Van de Graaff uses both smooth and pointed surfaces, conductors, and insulators to generate large static charges and, hence, large voltages. A substantial excess charge can be deposited on the sphere because it moves...

Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...