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Updated: Aug 19, 2026

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
Published on: January 19, 2018
Properties of photon tunneling through single-negative materials
1Photonics Solution Laboratory, Telecommunication R&D Center, Telecommunication Network, Samsung Electronics Company, Ltd., Dong Suwon PO Box 105, 416, Maetan-3dong, Yeongtong-gu, Suwon-si, Gyeonggi-do, South Korea 442-600. pvelrap@hanmail.net
Abstract:
The photon tunneling phenomena in the composite barriers of single-negative materials were analyzed. It was found that the tunneling through such a barrier shifts TE- and TM-polarization light waves laterally (parallel to the material interface) in two opposite directions, causing them to be divided into two waves after tunneling. This property could not be obtained with double-positive and (or) double-negative materials.
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